Multi-target Magnetron Sputtering Machine For Parylene,OLED, Solar Cell & Semiconductor

Category

Parameter

Primary Application

Nanoscale monolayer/multilayer films (hard coatings, metals, semiconductors, dielectrics)

Target Users

Universities, research institutes (R&D and small-batch production)

System Composition

Vacuum chamber, sputtering targets, sample stage, vacuum pumps, gas delivery, control systems, film thickness monitor, and auxiliary components

Parameter

Specification

Ultimate Vacuum

6.7 × 10^-5 Pa

System Leak Rate

≤1 × 10^-7 Pa·L/s

Vacuum Recovery Time

≤40 min (to 6.6 × 10^-1 Pa after N² purge)

Component

Specification

Chamber Dimensions

Ø630 mm × 350 mm (cylindrical)

Sample Capacity

8 × 4-inch substrates (1 mm thickness)

Feature

Specification

Target Types

3 × Permanent magnet targets, 3 × High-intensity magnet targets

Cooling Method

Indirect water-cooled (brazed structure)

Target Diameter

Ø100 mm

Target-Substrate Distance

50–90 mm (manual adjustment, with position indicator)

Sputtering Mode

Vertical downward sputtering

Parameter

Specification

Bias Voltage

Up to -200 V

Rotation Mechanism

Computer-controlled revolution + rotation (stepper motor-driven)

Temperature Control

RT to 300°C (single calibration required; 3 heaters, one active at a time)

Component

Specification

Mass Flow Controllers (MFC)

2 channels

Film Thickness Monitor

Quartz crystal microbalance (0–999,999 Å)

Configuration

Components

Standard

Turbo molecular pump + dry scroll pump

Alternative

Cryogenic pump + dry scroll pump